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Samsung Electronics officials announced Dec. 27 the company has crafted a 1G bit Mobile Dynamic Random Access Memory chip using 80nm process technology.

The new chip, company officials said, will be more cost-effective than other high density mobile solutions and used for a wide range of advanced handset applications as well as for digital still cameras, portable media players and portable gaming products. Mass production of the new chip is expected to begin in the second quarter of 2007, officials added.

According to Samsung, the electric current in the new chip drops a full 30 percent over conventional memory chip designs because of a new temperature-compensated, self-refresh feature that the self-refresh cycle to reduce power drain in standby mode.

In addition, the chip is at least 20 percent thinner than a multi-stack package of 512M bit dies, allowing a single high-density package solution of 1.5G bit or even 2G bit Mobile DRAM memory. The product can also be combined with Flash memory in multi-chip packaging, including package-on-package designs, company officials said.

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